▎ 摘　　要

NOVELTY - The method involves providing a substrate. The surface of a metal layer (103) and medium layer is exposed out by the substrate surface. The graphene is formed on the surface of the metal layer. An amorphous carbon layer (202a) is formed on the surface of the medium layer. The fluorine ion doping on the graphene layer is performed to form a fluorine-doped graphene layer (201a). An adhesive layer (203) is formed on the surfaces of the amorphous carbon layer and fluorine-doped graphene layer. USE - Method for forming semiconductor structure. ADVANTAGE - The improved method improves the performance of the semiconductor structure. DESCRIPTION OF DRAWING(S) - The drawing shows a structural view of the method for forming the semiconductor structure. Dielectric layer (100) Metal layer (103) Fluorine-doped graphene layer (201a) Amorphous carbon layer (202a) Adhesive layer (203)