• 专利标题:   Pre-treatment of substrate e.g. non-metal substrate such as semiconductor substrate or dielectric substrate used for forming graphene directly, involves using pre-treatment gas including carbon source and hydrogen.
  • 专利号:   US2020286732-A1, KR2020106458-A
  • 发明人:   SHIN K, LEE J, NAM S, SHIN H, LIM H, JUNG A, BYUN K, CHO Y, SHIN K W, LEE J H, NAM S G, SHIN H J, LIM H S, JUNG A R, BYUN K E, LEE J I, CHO Y C
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD
  • 国际专利分类:   C23C016/02, C23C016/26, H01L021/02, H01L029/16
  • 专利详细信息:   US2020286732-A1 10 Sep 2020 H01L-021/02 202080 Pages: 18 English
  • 申请详细信息:   US2020286732-A1 US807702 03 Mar 2020
  • 优先权号:   KR024851, KR026762

▎ 摘  要

NOVELTY - Pre-treatment of a substrate (20) involves using a pre-treatment gas including at least a carbon source (26) and hydrogen. USE - Pre-treatment of substrate e.g. non-metal substrate such as semiconductor substrate or dielectric substrate used for forming graphene (all claimed). ADVANTAGE - The method is carried out with high efficiency, and removes residues and oxides from the surface of the non-catalyst substrate. The pretreatment process increases the k-value of the substrate to a value greater than 2.70 and less than 2.80, and decreases the absorbance of the substrate measured at a wavenumber corresponding to D-band of graphene to 0.26. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for formation of graphene. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the graphene formation. Substrate (20) Surface (20A) Graphene seeds (24) Carbon source (26)