• 专利标题:   Nanocrystalline silicon carbide/graphene heterojunction prepared by coating outer surface of silicon carbide nanoparticle with graphene and then annealing under argon gas atmosphere, useful for photocatalytic degradation of organic matter.
  • 专利号:   CN102886270-A, CN102886270-B
  • 发明人:   GUO L, CHEN X, LIN J, JIA Y, ZHU K
  • 专利权人:   CHINESE ACAD SCI PHYSICS INST
  • 国际专利分类:   A62D101/20, A62D003/17, B01J027/224, C01B003/04
  • 专利详细信息:   CN102886270-A 23 Jan 2013 B01J-027/224 201348 Pages: 9 Chinese
  • 申请详细信息:   CN102886270-A CN10202795 19 Jul 2011
  • 优先权号:   CN10202795

▎ 摘  要

NOVELTY - Nanocrystalline silicon carbide/graphene heterojunction prepared by coating outer surface of the silicon carbide nanocrystal with a layer of graphene, and annealing the silicon carbide particle under vacuum or argon gas atmosphere at 1000-1600 degrees C, is claimed. USE - The nanocrystalline silicon carbide/graphene heterojunction is useful in photocatalysis field and dye sensitized solar cells, and for photocatalytic degradation of organic matter and photocatalytic hydrogen production(all claimed).