▎ 摘　　要

NOVELTY - A graphene is formed by depositing greater than or equal to 1 1st metal and greater than or equal to 1 2nd metal on surface of silicon carbide (SiC) and heating SiC, 1st metal, and 2nd metal under conditions that cause 1st metal to react with Si of SiC to form carbon and greater than or equal to 1 stable silicide, and corresponding solubilities of carbon in greater than or equal to 1 stable silicide and in greater than or equal to 1 2nd metal are sufficiently low that the carbon produced by the silicide reaction forms a graphene layer on the SiC. USE - Formation of graphene for structure formation (claimed). Can also be used in chemical and mechanical sensing applications and optical applications. ADVANTAGE - The formed graphene films have improved electrical conductivity relative to transferred graphene films and do not change the resonance frequency of SiC/graphene transducers when used in these transducers. The graphene layers may enable unprecedented levels of miniaturization for certain applications because the formed conductive sheets of graphene have higher thermal conduction and improved reliability relative to metal layers having similar physical dimensions. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) formation of graphene layers which involves depositing nickel/copper (Ni/Cu) layer on surface of SiC, heating resulting structure to cause at least a portion of Ni to react with corresponding portion of SiC to form carbon and metallic layer including nickel silicide and any remaining unreacted Ni and Cu, where the carbon is in the form of a graphene layer disposed between the remaining silicon carbide and the metallic layer; and (2) structure comprising greater than or equal to 1 layers of graphene. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram of the process for forming graphene layers. Epitaxial SiC on Si (202) Patterning of SiC (204) Deposition of thin metal alloy (206) Catalytic self-aligned graphitization (208) Wet removal of metal layer (210)