▎ 摘　　要

NOVELTY - The transistor has a substrate i.e. single crystal silicon connected with a grate to form an upper electrode. An insulation grate medium layer is connected with a grade electrode. A channel forming layer is arranged with the insulation grate medium layer. A source electrode is connected with a leakage electrode that is connected with a channel layer. The insulation channel layer is arranged with a silicon dioxide layer that is coated with a graphene film i.e. 2 to 4 graphene material layer to perform silicon dioxide layer drying process. USE - Radiation sensitive site effect transistor (RadFET). ADVANTAGE - The transistor is simple in structure and inexpensive, and has wide range of applications and prolonged service life, high device sensitivity, and avoids graphene thin film source electrode leakage problem and interface problem. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a radiation sensitive site effect transistor manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a radiation sensitive site effect transistor.