• 专利标题:   LED, has transparent electrode positioned on current spreading layer, P-type contact part positioned on transparent electrode, and N-type electrode positioned on N-type semiconductor layer, where transparent electrode is made of graphene.
  • 专利号:   KR2013068448-A
  • 发明人:   YOUN D H, CHOI S Y, CHOI H, KIM J
  • 专利权人:   ELECTRONICS TELECOM RES INST
  • 国际专利分类:   H01L033/36, H01L033/42
  • 专利详细信息:   KR2013068448-A 26 Jun 2013 H01L-033/42 201450 Pages: 14
  • 申请详细信息:   KR2013068448-A KR135622 15 Dec 2011
  • 优先权号:   KR135622

▎ 摘  要

NOVELTY - The LED has an N-type semiconductor layer positioned on a substrate, and an active layer positioned on the N-type semiconductor layer. A p-type semiconductor layer is positioned on the active layer. A current spreading layer is positioned on the P-type semiconductor layer. A transparent electrode is positioned on the current spreading layer. A P-type contact part is positioned on the transparent electrode. An N-type electrode is positioned on the N-type semiconductor layer, where the transparent electrode is made of graphene. USE - LED. ADVANTAGE - The transparent electrode is made of graphene having conductive impurity, so that the LED has improved current characteristic and transmission efficiency in UV range at all areas till infrared range. DESCRIPTION OF DRAWING(S) - The drawing shows a top perspective view of a LED.