▎ 摘　　要

NOVELTY - The device has an insulating layer (200) positioned on a substrate (100). A semiconductor layer (300) is arranged on the insulating film. A source electrode (400) and a drain electrode (500) are arranged on a first region and a third region respectively. The first region, the second region and the third region are made of same material. The work functions of the regions are reduced by chemical treatment. The regions are spaced apart from both ends of each other. Thickness of the semiconductor film is 8 nm or more and 15 nm or less. A blocking layer is partially formed on the layer that is made of disulfide-molybdenum, disulfides-tungsten, diselenide molyb denum, graphene and/or difluoride-hafnium. The region is provided with void defects. USE - Quasi-heterogeneous semiconductor junction multiplication method arithmetic device. ADVANTAGE - The semiconductor device comprises a substrate and an insulating layer that is positioned on the substrate, and thus enables facilitating the large-area fabrication based on the solution process. The device easily performs commercialization with simple process method. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for manufacturing a quasi-heterogeneous semiconductor junction multiplication method arithmetic device. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a quasi-heterogeneous semiconductor junction multiplication method arithmetic device. 100Substrate 200Insulating layer 300Semiconductor layer 400Source electrode 500Drain electrode