▎ 摘　　要

NOVELTY - Forming semiconductor structure involves providing a substrate, forming plasma by inductive coupling bombards a graphene target, and sputter depositing diamond-like carbon film on the substrate. USE - Method of forming a semiconductor structure. ADVANTAGE - The method enables to form semiconductor structure that increases the proportion of sp3 hybrid carbon in the generated diamond-like carbon thin film and reduces the hydrogen content, greatly improves the selection ratio of the carbon film, and can be applied to higher resolution and smaller size.