• 专利标题:   Plasmon-enhanced terahertz graphene-based optoelectronic structure, has least one plasmonic graphene channel that is tunable to produce controllable plasmon-enhanced resonance signal.
  • 专利号:   WO2016209666-A2, WO2016209666-A3, US2018315880-A1
  • 发明人:   JADIDI M M, SUSHKOV A B, GASKILL D K, FUHRER M, DREW H D, MURPHY T E
  • 专利权人:   UNIV MARYLAND COLLEGE PARK, US SEC OF NAVY, UNIV MONASH, US SEC OF NAVY, UNIV MONASH, UNIV MARYLAND COLLEGE PARK
  • 国际专利分类:   G01N021/3586, H01L033/36, G01N021/3581, H01L031/09, H01L031/101
  • 专利详细信息:   WO2016209666-A2 29 Dec 2016 G01N-021/3586 201705 Pages: 41 English
  • 申请详细信息:   WO2016209666-A2 WOUS037393 14 Jun 2016
  • 优先权号:   US175695P, US15735662

▎ 摘  要

NOVELTY - The structure (10) has a substrate (12), a conductive layer (16) formed above the substrate. At least one plasmonic graphene channel (22) is embedded in conductive layer. A source of an electromagnetic wave of a predetermined wavelength incidents on at least one plasmonic graphene channel and is polarized perpendicular. At least one plasmonic graphene channel has a width smaller than the predetermined wavelength of the electromagnetic wave and is tunable to produce a controllable plasmon-enhanced resonance signal. A gate terminal is coupled to an electrolyte layer. USE - Plasmon-enhanced terahertz graphene-based optoelectronic structure. ADVANTAGE - A hybrid metal graphene based optoelectronic device is provided where a large resonant absorption is attained in a low-mobility graphene with a peak of resonant absorption approaching 100% which is ideal for graphene-based THz detectors. The graphene-based terahertz photodetector is provided with increased absorption efficiency, high responsivity, and tunability of operational parameters over a broad range of frequencies. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method of fabrication of a plasmon-enhanced terahertz graphene- based optoelectronic structure. DESCRIPTION OF DRAWING(S) - The drawing shows a side view of the subject hybrid metal-graphene based optoelectronic system showing the applied controllable gate voltage and an incident electromagnetic wave polarized perpendicular to the graphene channels, as well as the Reflected and Transmitted portions of the radiation. Plasmon-enhanced terahertz graphene-based optoelectronic structure (10) Substrate (12) Graphene (14) Conductive layer (16) Graphene channel (22)