▎ 摘　　要

NOVELTY - The device (800) has graphene sheet that comprises lateral sections (801b,801c) separated from central ribbon section (801a) by respective parallel highly reflective transport barriers (802a,802b). Transport barriers causes first set of electrons from electron source (803) to travel towards central ribbon section and causes second set of electrons from electron source to be reflected at central ribbon section back to electron source. Barrier causes third set of electrons from electron source to be transmitted through central ribbon section by resonant tunneling. USE - Resonant tunneling graphene device of graphene resonant tunneling transistor (claimed). ADVANTAGE - The transport barriers can be in the form of the parallel line defects which delineate the central ribbon section and the two lateral sections. The line defects are chemically decorated by the adsorption of diatomic gases. The transport barriers can be formed by the application of large local potentials directly to the graphene sheet. The room-temperature ballistic transport long enough for use in resonant transistor design can be exhibited efficiently. The band gap problem in graphene can be eliminated and the fabrication of in-plane resonant tunneling-based transistor switches can be allowed. The large number of transistors can be densely packed in large crystalline sheets of graphene with automatic alignment of individual transistors. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a graphene resonant tunneling transistor. DESCRIPTION OF DRAWING(S) - The drawing shows a block diagram of the graphene resonant tunneling transistor. Resonant tunneling graphene device (800) Central ribbon section (801a) Lateral sections (801b,801c) Transport barriers (802a,802b) Electron source (803)