• 专利标题:   Graphene plasmonic component for all-optical modulation, has periodic nanostructure that is provided with graphene/TMD heterojunction which is formed between graphene thin film layer providing Fermi energy and TMD thin film layer.
  • 专利号:   CN111025690-A
  • 发明人:   DAI Q, GUO X, YANG X, LIU R, HU D, HU H, WU C, LUO C
  • 专利权人:   NAT CENT NANOSCIENCE TECHNOLOGY CHINA
  • 国际专利分类:   G02F001/00, G02F001/015, G02F001/03, G02F002/00
  • 专利详细信息:   CN111025690-A 17 Apr 2020 G02F-001/015 202040 Pages: 14 Chinese
  • 申请详细信息:   CN111025690-A CN11279644 13 Dec 2019
  • 优先权号:   CN11279644

▎ 摘  要

NOVELTY - The component has a main component that is provided with a transition-metal dichalcogenide (TMD) thin film layer (3) and a graphene thin film layer (4) from bottom to top, and the graphene thin film layer covers the TMD thin film layer to form a graphene/TMD heterojunction. A fixed Fermi energy is provided in the graphene film layer. A periodic nanostructure which is provided with a graphene/TMD heterojunction is formed between the graphene thin film layer providing the Fermi energy and the TMD thin film layer. USE - Graphene plasmonic component for all-optical modulation. ADVANTAGE - The plasmonic component realizes the modulation of graphene plasmon infrared signal through visible light. It is a novel all-optical modulation polarimetric device, including applications in optical waveguide devices, photodetectors and optical memory storage devices. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing graphene plasmonic components for all-optical modulation. DESCRIPTION OF DRAWING(S) - The drawing shows a front view of the graphene plasmonic component for all-optical modulation. Transition-metal dichalcogenide thin film layer (3) Graphene thin film layer (4)