• 专利标题:   Method of disposing graphene thin film over target receiving substrate involves hetero-epitaxially growing graphene thin film on catalyst thin film containing a metal and disposing graphene thin film and catalyst thin film.
  • 专利号:   US2012312693-A1, US8591680-B2
  • 发明人:   VEERASAMY V S
  • 专利权人:   GUARDIAN IND CORP
  • 国际专利分类:   B82Y040/00, C25D011/02, C30B025/02, C23C028/00
  • 专利详细信息:   US2012312693-A1 13 Dec 2012 C30B-025/02 201302 Pages: 21 English
  • 申请详细信息:   US2012312693-A1 US546022 11 Jul 2012
  • 优先权号:   US461347, US546022

▎ 摘  要

NOVELTY - Graphene thin film is disposed over target receiving substrate by hetero-epitaxially growing graphene thin film on catalyst thin film containing a metal, disposing graphene thin film and catalyst thin film directly or indirectly on target receiving substrate, and anodizing catalyst thin film to render catalyst thin film a transparent metal oxide. USE - A method of disposing graphene thin film over target receiving substrate (claimed). ADVANTAGE - Extremely flexible graphene film is continuous, likelihood of graphene film to curl up, crease, or deform is reduced, and graphene films have good chemical and thermal stability. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for method of isolating graphene thin film. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of the catalytic growth techniques of graphene thin films.