▎ 摘　　要

NOVELTY - Fabricating a semiconductor structure, comprises providing a substrate including a first region and a second region, and forming many fins on the first region of the substrate, forming an isolation structure on the first region and the second region of the substrate, forming a gate structure across the fins and on the isolation structure at the first region, etching the isolation structure and the substrate at the second region to form a first opening, filling the first opening with a conductive material layer and etching the gate structure till exposing the isolation structure to form a second opening in the gate structure and removing a portion of the conductive material layer in the first opening to form a power rail. The conductive material layer is made of a material including ruthenium, copper and/or graphene. The dielectric layer is made of a material including silicon nitride, silicon oxynitride, silicon oxide, and/or silicon carbide. USE - The method is useful for fabricating semiconductor structure. ADVANTAGE - The method: improves response speed of the semiconductor structure, reduces the standard cell size, thus improving the performance of the semiconductor structure; and forms gate electrode across the fin structure to provide an increased surface area for the channel, thus forming faster, more reliable and better controllable semiconductor devices. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for semiconductor structure.