▎ 摘　　要

NOVELTY - The method involves forming (S100) the organic material on one portion of the graphene and surface-processing by patterning the organic material and selectively forming the organic material on the deactivation graphene. The dielectric thin film is formed (S200) on the organic material. The oxygen source consisting of oxygen, hydrogen oxide, oxygen plasma or ozone is supplied within the chamber. USE - Surface processing method for graphene substrate of electric component such as organic field effect transistor (OFET), organic thin film transistor (OTFT), organic LED (OLED), organic radiation transistor (OLET), organic photoelectric transformation device (OPV), organic light detector (OPD), organic solar cell, organic memory device, touch panel, thermoelectric device, laser diode, Schottky diode, photoconductor, optical detector, biosensor, bio-chip and gas sensor (all claimed) used in electronic device. ADVANTAGE - The electrical characteristic and the flexibility of the graphene substrate are improved. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) a graphene substrate; and (2) an electric component. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the surface processing process. (Drawing includes non-English language text) Step for forming organic material on one portion of graphene (S100) Step for forming dielectric thin film on organic material (S200)