▎ 摘　　要

NOVELTY - Light emitting diode epitaxial wafer, comprises a substrate, a first semiconductor layer, a multi-quantum well layer and a second semiconductor layer stacked in sequence. The multi-quantum well layer comprises periodically and alternately stacked quantum well layer and quantum barrier layer. The quantum barrier layer adjacent to the second semiconductor layer in the multi-quantum well layer comprises a first sub-layer, a second sub-layer and a third sub-layer laminated sequentially. The first sub-layer is a gallium nitride layer, the second sub-layer is a graphene thin film layer, the third sub-layer is magnesium-doped aluminum gallium nitride layer. USE - Light emitting diode epitaxial wafer for use in solid illumination field and display field. ADVANTAGE - The light emitting diode epitaxial wafer increases the hole expansion and hole mobility, hole concentration and expansion capability in the quantum well, and plays a role of electron blocking, and increases the composite probability of electron hole pair in the multi-quantum well. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a preparation method of light emitting diode epitaxial wafer. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic structural view of a light emitting diode epitaxial wafer in solid illumination field and display field. 10Substrate 20Buffer layer 30Non-doped u-gallium nitride layer 40N-type gallium nitride layer 50Multi-quantum well layer 60Electron blocking layer 70P-type gallium nitride layer