▎ 摘　　要

NOVELTY - Preparing graphene by chemical vapor deposition (CVD) comprises adopting copper and nickel dual target magnetron co-sputtering method to sputter copper and nickel on monocrystalline silicon surface; depositing copper-nickel alloy thin film on monocrystalline silicon substrate surface, and transferring into a CVD reaction furnace, passing helium gas; heating the substrate; introducing hydrogen, then injecting benzene; depositing copper-nickel alloy thin film on monocrystalline silicon substrate, cooling to room temperature; and removing the graphene thin film grown on the substrate. USE - The method is useful for preparing graphene by CVD (claimed). DETAILED DESCRIPTION - Preparing graphene by chemical vapor deposition (CVD) comprises (i) taking monocrystalline silicon substrate, using copper target and nickel target, adopting copper and nickel dual target magnetron co-sputtering method to sputter copper and nickel on monocrystalline silicon surface at sputtering power of 120-200W and 80-100W, to obtain copper-nickel alloy thin film with thickness of 3-5 mu m; (ii) depositing copper-nickel alloy thin film on monocrystalline silicon substrate surface, and transferring into a CVD reaction furnace, passing helium gas into the reaction furnace at a flow rate of 500 sccm, continuing passing for 10 minutes, so as to drain the air in the reaction furnace; (iii) heating the substrate to 400-600 degrees C for 20-40 minutes, continuing passing helium gas into the reaction furnace, and controlling the pressure in the reaction furnace to 5-10Torr; (iv) maintaining the substrate temperature at 400-600 degrees C, introducing hydrogen into the reaction furnace at a flow rate of 200-300 sccm, then injecting benzene at speed of 100-150 mu l/minute; (v) maintaining the pressure in the CVD reaction furnace to 5-10 Torr, after completing injecting benzene, stopping passing hydrogen gas, then introducing helium gas, depositing copper-nickel alloy thin film on monocrystalline silicon substrate at 20 degrees C/minute speed, cooling to room temperature, and continuing passing helium for 10 minutes; and (vi) removing the graphene thin film grown on the substrate.