▎ 摘　　要

NOVELTY - The device has an electrode pair (4) that is arranged on both sides of the upper surface of the insulating substrate (1). A carbon nanotube network (2) is positioned between the electrode pairs, and an island-shaped graphene (3) is in the carbon nanotube network. The insulating substrate is a silicon or silicon-di-oxide substrate, a glass substrate, a PDMS substrate or a PET substrate. USE - High performance photovoltaic device based on a carbon nanotube and graphene Schottky junction. ADVANTAGE - The device adopts the schottky structure of the island graphene and the carbon nanotube network to transfer the photogenerated holes in the carbon nanotubes and is restricted to the island graphene, which greatly reduces the photocatalytic carrier recombination probability. The dark current caused by continuous graphene as a conductive channel is greatly reduced, and thus, improving the photoelectric performance of the device. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of the high performance photovoltaic device. Insulating substrate (1) Carbon nanotube network (2) Island-shaped graphene (3) Electrode pair (4) Source (5)