• 专利标题:   Method of improving quality of graphene on non-metallic substrate involves depositing layer of copper on graphene grown non-metallic substrate, performing chemical vapor deposition, and removing copper surface using oxygen plasma.
  • 专利号:   CN105836733-A, CN105836733-B
  • 发明人:   DENG J, FAN X, GUO W, SUN J, XU C, XU K
  • 专利权人:   UNIV BEIJING TECHNOLOGY
  • 国际专利分类:   C01B031/04, C01B032/186
  • 专利详细信息:   CN105836733-A 10 Aug 2016 C01B-031/04 201671 Pages: 7 Chinese
  • 申请详细信息:   CN105836733-A CN10144523 14 Mar 2016
  • 优先权号:   CN10144523

▎ 摘  要

NOVELTY - Method of improving quality of graphene on a non-metallic substrate involves growing a graphene film on the non-metallic substrate, depositing a layer of copper with thickness of 500-600 nm on the substrate, performing chemical vapor deposition (CVD) in a reaction chamber, again growing graphene film on the substrate and again performing CVD method, removing copper surface using an oxygen plasma, and etching copper using an ferric chloride solution. USE - Method of improving quality of graphene on a non-metallic substrate (claimed). ADVANTAGE - The method provides improved quality of graphene on the non-metallic substrate with improved performance.