▎ 摘　　要

NOVELTY - The transistor has an active layer comprising a semiconductor oxide layer and a graphene layer, where thickness of the oxide layer is 600 to 2000 A. The active layer is formed along a laminated layer. Function of the oxide layer is less than function of the graphene layer. The oxide layer comprises ZnO, InO, ALO, IGZO, YZO and ITZO. Amount of a metal atom and a carbon atom in the active layer is in ratio of 1: 1-10. USE - Thin film transistor for an array substrate of a display device (all claimed). ADVANTAGE - The transistor avoids corrosion, and has high current carrier migration rate. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for manufacturing an array substrate. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a thin film transistor for an array substrate.