▎ 摘　　要

NOVELTY - The method involves growing a graphene layer (2) on a surface of a gallium nitride-based device (1). A simple substance metal layer (3) is formed on the graphene layer. The graphene layer is provided with a first graphene layer and a second graphene layer that are connected with each other. USE - The method is useful for forming an electrode structure on a surface of a gallium nitride-based device (claimed), i.e. LED multi-quantum well structure. ADVANTAGE - The method enables forming the electrode structure on the surface of the GaN-based device without an annealing process of the composite metal layer, so as to avoid damage of high temperature of composite metal layers in the prior art. The method ensures that the process is simplified, thus shortening manufacturing time of the device at a certain degree, and hence improving productivity effect of the gallium nitride based device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for an electrode structure of gallium nitride-based device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the electrode structure on the surface of GaN-based device. Gallium nitride-based device (1) Graphene layer (2) Metal layer (3)