▎ 摘　　要

NOVELTY - The semiconductor structure has an ordered array of parallel graphene nanoribbons located on the surface of a substrate (12). The substrate may be a dielectric material or a semiconductor material. The dielectric material or semiconductor material is the top layer of a multilayer stack. Each graphene nanoribbon has a width of 1 to 30 nanometers, is separated by a uniform width, and is comprised of single-layer graphene, few-layer graphene, multi-layer graphene, or a mixture of single-layer, few-layer and multi-layer graphene. USE - Semiconductor structure used in e.g. cellular phone, personal computer. ADVANTAGE - Provides a semiconductor structure that includes an ordered array of parallel graphene nanoribbons, and may be provided in the form of FET, diode, or bipolar complementary metal oxide semiconductor (BiCMOS) transistor. DETAILED DESCRIPTION - The dielectric material may be made of glass, silicon dioxide, silicon mononitride, organosilicate glass, hydrogenated silicon carbide, hydrogenated silicon cyanide, plastic, diamond-like carbon, boron nitride, carbon boron nitride, or a mixture of amorphous-hexagonal bonding boron nitride or carbon boron nitride. The semiconductor material may be made of silicon, silicon-germanium, silicon-germanium carbide, silicon carbide, germanium alloys, gallium arsenide, indium arsenide, or indium phosphide. An INDEPENDENT CLAIM is also included for the semiconductor circuit. DESCRIPTION OF DRAWING(S) - The drawing is a pictorial representation through a cross-sectional view illustrating the semiconductor structure after forming an ordered array of nanowires on top of the dielectric material layer and across the gap in the patterned graphene layer. Substrate (12) Patterned graphene layer (14') Gap (18') Dielectric material layer (20) Ordered array of nanowires (22)