• 专利标题:   Thin film bulk acoustic resonator used in thin film bulk acoustic wave filter, has substrate that is thinned, and patterned first electrode layer, patterned piezoelectric layer and patterned second electrode layer are sequentially stacked on thinned substrate.
  • 专利号:   CN114024518-A
  • 发明人:   HE C, BIAN Y, KANG S, YU H
  • 专利权人:   BEIJING AEROSPACE MICROELECTRONICS TECH
  • 国际专利分类:   H03H003/02, H03H009/02, H03H009/56, H03H009/58
  • 专利详细信息:   CN114024518-A 08 Feb 2022 H03H-003/02 202224 Chinese
  • 申请详细信息:   CN114024518-A CN11268161 29 Oct 2021
  • 优先权号:   CN11268161

▎ 摘  要

NOVELTY - The resonator has a patterned second electrode layer (10), a patterned piezoelectric layer (20), a patterned first electrode layer (30), a substrate (61) and a base (62). Multiple first heat dissipation blind holes are arranged on the substrate, and filled with thermally conductive heat dissipation material (50) to form a first total reflection structure. Multiple second heat dissipation blind holes are arranged on the base, and filled with thermally conductive heat dissipation material to form a second total reflection structure. The opening of each first blind heat dissipation hole and the opening of each second blind heat dissipation hole are arranged opposite to each other. The substrate is thinned, and the patterned first electrode layer, the patterned piezoelectric layer and the patterned second electrode layer are sequentially stacked on the thinned substrate, where the patterned first electrode layer covers all the second heat dissipation blind holes. USE - Thin film bulk acoustic resonator used in thin film bulk acoustic wave filter (claimed). ADVANTAGE - The thin film bulk acoustic resonator is prepared while maintaining the original high Q value. The structure reliability is strong, which is good for integration, simple preparation technique. The heat-conducting radiating material is filled in each first radiating blind hole and each second radiating blind hole, and thus the structure reliability of the resonator can be improved. The thickness of the first electrode layer can be reduced, and the thicknesses of the patterned piezoelectric layer and the pattern of the second electrode layer are reduced, so that the size of the thin film acoustic wave filter can be decreased. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: a preparation method for preparing the thin film bulk acoustic resonator; and a thin film bulk acoustic wave filter. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic structural view of a thin film bulk acoustic resonator. Patterned second electrode layer (10) Patterned piezoelectric layer (20) Patterned first electrode layer (30) Thermally conductive heat dissipation material (50) Substrate (61) Base (62)