▎ 摘　　要

NOVELTY - The structure has a substrate provided with a barrier layer. The barrier layer is fixed on a dielectric layer. The dielectric layer is provided with a porous medium layer. A porous dielectric layer is fixed on upper layer graphite nano-belt lines. A lower layer interconnection of a medium layer is formed to the porous medium layer. The upper layer graphite nano-belt lines are isolated in the dielectric layer through an air gap. A thickness of the upper-layer graphite nano-belt lines is less than 10nm. USE - Air gap/graphene interconnection structure. ADVANTAGE - The structure replaces traditional copper metal by the graphite nano-belt lines and simplifies the manufacturing process. The lower layer interconnection overlapping position is formed through the air gap, thus reducing coupling capacitance and resistor capacitor (RC) delay time in an effective manner, and hence improving chip performance. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for an air gap interconnect structure/graphene preparation method. DESCRIPTION OF DRAWING(S) - The drawing shows a partial sectional view of an air gap/graphene interconnection structure.