• 专利标题:   Method for manufacturing high-yield resistance change memory device based on polyimide and graphene oxide composite material, involves forming upper electrode layer on upper surface of resistance change material layer.
  • 专利号:   KR2225772-B1
  • 发明人:   CHUNG C M, CHO S H, CHOI J Y, LEE J, JIN S W, JEON J H, NAM K, HYUK L, PARK H J, JANG J H, DONGMIN K, LEE J K
  • 专利权人:   UNIV YONSEI WONJU INDACAD COOP FOUND
  • 国际专利分类:   H01L045/00
  • 专利详细信息:   KR2225772-B1 09 Mar 2021 H01L-045/00 202126 Pages: 12
  • 申请详细信息:   KR2225772-B1 KR129002 17 Oct 2019
  • 优先权号:   KR129002

▎ 摘  要

NOVELTY - The method involves forming a lower electrode layer on the upper surface of the substrate. A resistance change material layer is formed on an upper surface of the lower electrode layer that is formed through the lower electrode layer forming step. An upper electrode layer is formed on the upper surface of the resistance change material layer annealed through the annealing step. The resistance change material layer is made of a material that chemically combines graphene oxide and polyimide surface-modified with 2,6-diaminoanthracene, The polyimide and graphene oxide composite material is formed by mixing 2,6-diaminoanthracene and dianhydride in graphene oxide surface-modified with 2,6-diaminoanthracene to form a polyamic acid gel, and the polyamic acid gel is prepared through chemical imidization after making a solution by irradiating with microwaves that does not form plasma. USE - Method for manufacturing high-yield resistance change memory device based on polyimide and graphene oxide composite material. ADVANTAGE - The on-off current ratio, durability, and yield of the resistance change memory device are improved when the resistance change material layer is annealed during the above temperature and time period. The resistance-variable memory device manufactured according to the first embodiment of the present invention has write-once read-many times (WORM) characteristics since no change in the resistance state occurs after the forming process. The forming process (black color) on the graph is a process in which the resistance state changes through the application of the test voltage, and the current flowing through it is greatly increased. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a high-yield resistance change memory device based on a polyimide and graphene oxide composite material. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a method for testing physical properties of a high-yield resistance variable memory device based on a polyimide and graphene oxide composite material.