▎ 摘　　要

NOVELTY - The method involves subjecting bi-layer graphene to an electric field and simultaneously subjecting bi-layer graphene to an applied strain so that interlayer spacing between the bi-layer graphene is reduced. The applied strain is created by expanding dielectric material having ferroelectric and piezoelectric properties. The bandgap is created in the bi-layer graphene. USE - Method for forming tunable bandgap in graphene based switching device (claimed). ADVANTAGE - The tunable bandgap is produced in the graphene so that high on/off ratio is achieved. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) graphene based switching device; and (2) method for forming graphene based switching device. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of graphene-based switching device. Substrate (100) Bi-layer graphene channel (112) Metal contact (114) Top gate dielectric layer (116) Graphene-based switching device (200)