1. 平台首页
  2. 国际专利信息
  • 专利标题:   Method for doping sulfur on graphene involves placing graphene in chemical vapor deposition reaction chamber, introducing sulfur source gas to perform sulfur doping on graphene and cooling hydrogen and inert gas atmosphere.
  • 专利号:   WO2015176220-A1, US2017062219-A1, US9741568-B2
  • 发明人:   LI T, LIANG C, WANG Y
  • 专利权人:   SHANGHAI INST MICROSYSTEM INFORMATION
  • 国际专利分类:   C01B031/02, C01B031/04, H01L021/04, H01L021/22, H01L021/38
  • 专利详细信息:   WO2015176220-A1 26 Nov 2015 C01B-031/02 201581 Pages: 16 Chinese
  • 申请详细信息:   WO2015176220-A1 WOCN077840 20 May 2014
  • 优先权号:   WOCN077840, US15117196

▎ 摘　　要

NOVELTY - Method for doping sulfur on graphene involves placing the graphene in a chemical vapor deposition reaction chamber, performing ventilation and exhaust treatment on the reaction chamber using inert gas, introducing sulfur source gas to perform sulfur doping on the graphene at 500-1050 degrees C and cooling the reaction chamber under hydrogen and inert gas atmosphere. USE - Method for doping sulfur on graphene (claimed).