• 专利标题:   Non-invasive transfer-preparation of graphene by chemical vapor deposition, comprises growing graphene films on metal substrate and dispensing organic solvent coatings comprising polymethyl methacrylate on surface of graphene film.
  • 专利号:   CN104150476-A, CN104150476-B
  • 发明人:   JIN C, YANG X
  • 专利权人:   SUZHOU SDIK NEW MATERIAL TECHNOLOGY CO, SUZHOU SIDIKE NEW MATERIALS SCI TECHNO
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   CN104150476-A 19 Nov 2014 C01B-031/04 201507 Pages: 6 Chinese
  • 申请详细信息:   CN104150476-A CN10403176 15 Aug 2014
  • 优先权号:   CN10403176

▎ 摘  要

NOVELTY - Non-invasive transfer-preparation of graphene by chemical vapor deposition, comprises: (a) growing graphene films on metal substrate using spin coater, dispensing organic solvent coatings comprising polymethyl methacrylate on surface of graphene film, starting spin coater and evenly coating para-methoxy-N-methylamphetamine (PMMA) graphene films, heating metal substrate on stage, and drying using PMMA solvent; and (b) placing resulting metal substrate coated with PMMA in metal etching solution, and removing the metal substrate. USE - The method is useful for non-invasive transfer-preparation of graphene by chemical vapor deposition (claimed). ADVANTAGE - The method: is simple, efficient, and economical; and provides graphene film which is clean, and can be transferred to large area of the target base, and the transferred graphene film maintains the integrity of structural features. DETAILED DESCRIPTION - Non-invasive transfer-preparation of graphene by chemical vapor deposition, comprises: (a) growing graphene films on metal substrate using a spin coater, dispensing organic solvent coatings comprising polymethyl methacrylate on the surface of graphene film, starting a spin coater and evenly coating PMMA graphene films, heating the metal substrate on the stage, and drying using PMMA solvent; (b) placing the resulting metal substrate coated with PMMA in a metal etching solution, and removing the metal substrate; (c) transferring graphene film using target substrate to a beaker of deionized water at room temperature and rinsing for 10-15 minutes, picking the target substrate-graphene film, bake drying on the heating stage, and removing moisture from graphene films and graphene film with target substrate; (d) dropping small amount of the PMMA solution on the resulting graphene film surface, dissolving the graphene film in PMMA before accumulation, and producing a PMMA film; and (e) immersing the treated film in an acetone solution of graphene for 0.5-1 hour and removing the PMMA solution graphene film surface, and annealing the graphene film for 3-5 hours.