• 专利标题:   Method for preparing monolayer graphene encapsulated copper nano particles involves forming single layer graphene encapsulated copper nanoparticles on surface of conductive substrate by chemical vapor deposition method.
  • 专利号:   CN106521455-A
  • 发明人:   HUANG L, ZHANG Y
  • 专利权人:   BEIJIA ENVIRONMENTAL TECHNOLOGY SUZHOU
  • 国际专利分类:   C23C016/30, C23C016/44
  • 专利详细信息:   CN106521455-A 22 Mar 2017 C23C-016/44 201728 Pages: 7 Chinese
  • 申请详细信息:   CN106521455-A CN10837752 21 Sep 2016
  • 优先权号:   CN10837752

▎ 摘  要

NOVELTY - The method for preparing monolayer graphene encapsulated copper nano particles involves forming single layer graphene encapsulated copper nanoparticles on the surface of the conductive substrate by chemical vapor deposition method. The conductive substrate is selected from three dimensional graphene foam, porous carbon foam and porous metal foam. USE - Method for preparing monolayer graphene encapsulated copper nano particles. ADVANTAGE - The method enables preparation of monolayer graphene encapsulated copper nano particles with particle size of 5-50 nm, increased unsaturated bond of surface copper atoms, improved reaction efficiency, and adopts atomic copper atom as reaction precursor.