▎ 摘　　要

NOVELTY - Graphene compound is obtained by preparing graphene flakes or chemical vapor deposition (CVD) grown graphene films on a silicon dioxide/silicon substrate, exposing graphene flakes or the CVD grown graphene film to hydrogen plasma, performing hydrogenation of graphene having a majority carrier type, creating a bandgap from the graphene hydrogenation, applying an electric field to the hydrogenated graphene and tuning the bandgap. USE - Graphene compound used in patterning graphene samples for nanocircuit design and device integration e.g. positive-negative type junctions. ADVANTAGE - The graphene enables converting majority carrier type from electrons to holes using surface adsorbates e.g. water and ensures independent carrier type control by tuning, avoiding high quality dielectrics and leakage current, and has conductivity which does not turned off electronically in semiconductor materials. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for hydrogenated graphene.