• 专利标题:   Sandwich structure for integrated semiconductor device, comprises gallium indium alloy needle tip, perovskite microcrystals, and monolayer graphene on silicon substrate.
  • 专利号:   CN114203902-A, CN114203902-B
  • 发明人:   YIN K, WANG W, LI Y, NI L, ZHAO Z, XIANG D
  • 专利权人:   UNIV NANKAI
  • 国际专利分类:   H01L047/00
  • 专利详细信息:   CN114203902-A 18 Mar 2022 H01L-047/00 202232 Chinese
  • 申请详细信息:   CN114203902-A CN10975692 16 Sep 2020
  • 优先权号:   CN10975692

▎ 摘  要

NOVELTY - Sandwich structure comprises gallium indium alloy needle tip, perovskite microcrystals, and monolayer graphene on a silicon substrate. USE - The structure is useful for integrated semiconductor device. ADVANTAGE - The structure enhances the recombination of photogenerated carriers, makes the IV curve exhibit a negative differential resistance effect, and provides a new method for future new integrated semiconductor devices to work stably and normally at room temperature and high voltage. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for structural device. DESCRIPTION OF DRAWING(S) - The drawing uses perovskite microcrystal to realize the negative differential resistance method three-dimensional diagram at room temperature. Needle tube (1) Purple light (2) Gallium indium alloy needle tip (3) Perovskite micron crystal (4) Monolayer graphene (5) Silicon substrate (6) Piezoelectric device (7)