▎ 摘　　要

NOVELTY - Preparing boron-doped semiconductor graphene comprises depositing carbon and boron on a surface of tungsten wire, which is electrically heated by carbon source gas, boron source gas and diluent gas in a closed cavity, simultaneously pulling the tungsten wire continuously to obtain continuously deposited composite filament of carbon, boron and tungsten wire, peeling the boron-containing graphite and tungsten composite wire to obtain boron-containing graphite, and subjecting the boron-containing graphite to ultrasound or microwave treatment in a solvent. USE - The boron-doped semiconductor graphene is useful as channel material in preparing field-effect tube for electrical characterization (claimed). ADVANTAGE - The method achieves easy and continuous production of good semiconductor graphene material.