▎ 摘　　要

NOVELTY - Gating device comprises a graphene two-dimensional material layer used as bottom electrode boron nitride (BN) two-dimensional material layer i.e. as a functional layer and a top electrode array comprising a multi linear top electrodes arranged at an interval. The material of the linear top electrode is silver or copper. USE - The gating device is useful for three-dimensional integration based on two-dimensional material in electronic device. ADVANTAGE - The gating device: is compatible with two-dimensional memory structure technique; can solve the problem of the contact gating devices and two-dimensional material memory, realize the three-dimensional cross array integrated based on two-dimensional material., provided for high density three-dimensional integration of two-dimensional material groups; uses graphene two-dimensional material layer as bottom electrode BN two-dimensional layer as a functional layer i.e. used as a bottom electrode for transferring the BN material layer to the graphene two-dimensional layer, and is formed as the functional layer, thus the graphene material layer acts as a top electrode for forming the top electrodes. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparing the material-based gating device.