▎ 摘　　要

NOVELTY - Graphene film is formed on silicon carbide (SiC) substrate by planarizing surface of SiC single crystal to remove scratch and form a step-terrace structure, washing and annealing at 800-1100 degrees C for 1-10 minutes in vacuum to form graphene in SiC surface. The number of graphene layers is controlled by controlling the annealing process. USE - A method of forming graphene film on silicon carbide substrate for electronic device materials, such as metal transistor, wafer, chip, field-effect transistor, metal oxide semiconductor field-effect transistor and sensor. ADVANTAGE - The method produces high quality graphene film on silicon carbide substrate. Defects on surface are eliminated. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a SiC substrate which contains graphene produced by the method of forming graphene film on SiC substrate. DESCRIPTION OF DRAWING(S) - The drawing shows a graph demonstrating the temperature dependence of the CARE-SiC (0001) substrate, measured by Temperature Programmed Desorption (TPD).