• 专利标题:   Preparation of nickel-copper twin-crystal film involves depositing metal film on aluminum oxide crystal surface of sapphire substrate, obtaining front body nickel copper film, heating and annealing.
  • 专利号:   CN112837993-A
  • 发明人:   ZHANG X, WU T, WANG H, YU Q, XIE X
  • 专利权人:   SHANGHAI INST MICROSYSTEM INFORMATION
  • 国际专利分类:   H01L021/02
  • 专利详细信息:   CN112837993-A 25 May 2021 H01L-021/02 202154 Pages: 16 Chinese
  • 申请详细信息:   CN112837993-A CN11165270 25 Nov 2019
  • 优先权号:   CN11165270

▎ 摘  要

NOVELTY - Preparation of nickel-copper twin-crystal film with 60 degrees in-plane angle involves depositing a metal film on a crystal surface of an aluminum oxide of the sapphire substrate, obtaining front body nickel copper film adhered on sapphire substrate, placing the front body nickel-copper film is placed in heating furnace, performing annealing treatment in a mixed atmosphere of argon gas and hydrogen to obtain nickel-copper twin-crystal film with preferred orientation in out-of-plane direction. USE - Preparation of nickel-copper twin-crystal film (claimed). ADVANTAGE - The nickel-copper twin-crystal film has strong catalytic performance, greatly improved growth speed of the graphene and reduced cost of preparing graphene single crystal wafer.