▎ 摘　　要

NOVELTY - The method involves performing a surface bonding process for a substrate after a surface treatment with graphite, and applying outer stress to generate atomic bonding force between the substrate and the graphite by using heat treatment way, mechanical force applying way or voltage applying way. The heat treatment way is processed at 500 to 800 degree Celsius for 30 minutes to 5 hour. The substrate is separated from the graphite by mechanical force to obtain a graphene wafer on the substrate. USE - Method for preparing a graphene wafer. ADVANTAGE - The method enables preparing the graphene wafer with big area and controlling size of the graphene wafer in an easy manner. The method realizes automatic production in batches. DETAILED DESCRIPTION - The substrate is a semiconductor wafer substrate, an ionic crystal substrate, a glass substrate and a metal substrate. The semiconductor wafer substrate is silicon (Si), Gallium arsenide (GaAs), Indium phosphide (InP), silicon carbide (SiC) or Gallium nitride (GaN). The ionic crystal substrate is quartz, sapphire, Magnesium oxide (MgO), sodium chloride (NaCl) or Titanium dioxide (TiO2).The metal substrate is iron (Fe), copper (Cu), aluminum (Al) or gold (Au).