• 专利标题:   Three-dimensional memory, has gate layer and dielectric layer coated in laminated structure, where gate layer is made of graphene and thickness of gate layer is less than quarter of thickness of dielectric layer.
  • 专利号:   CN110391250-A
  • 发明人:   GUO S
  • 专利权人:   YANGTZE MEMORY TECHNOLOGIES CO LTD
  • 国际专利分类:   H01L027/1157, H01L027/11582
  • 专利详细信息:   CN110391250-A 29 Oct 2019 H01L-027/1157 201989 Pages: 12 Chinese
  • 申请详细信息:   CN110391250-A CN10544684 21 Jun 2019
  • 优先权号:   CN10544684

▎ 摘  要

NOVELTY - The memory has a gate layer and a dielectric layer alternately coated in a laminated structure. The gate layer is made of graphene. The gate layer is coated with a single-layer graphene layer or a multi-layer graphene layer. The single-layer graphene layer is coated with conductive adhesive, where thickness of the gate layer is less than quarter of thickness of the dielectric layer. USE - Three-dimensional flash memory. ADVANTAGE - The memory reduces thickness of the gate layer by material characteristics so as to reduce overall thickness and thickness factor problem caused by process of the three-dimensional memory, and ensures high thermal conductivity of graphite material so as to effectively reduce device heating problem. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a three-dimensional memory manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a three-dimensional memory.