▎ 摘　　要

NOVELTY - Blind hole filling using reduced graphene as seed layer involves (i) pre-processing the drilled circuit board, removing the glue residue and forming a manganese dioxide layer on the surface of the blind hole to obtain the pre-processed circuit board; (ii) forming a polyaniline layer on the surface of the manganese dioxide layer of the pre-processed circuit board to obtain a first circuit board; (iii) forming a graphene oxide layer on the surface of the polyaniline layer of the first circuit board to obtain a second circuit board; (iv) irradiating the second circuit board under ultraviolet light to reduce the graphene oxide, reducing the surface resistance, and obtaining the third circuit board; and (v) performing reverse pulse electroplating on the third circuit board, and completing the blind hole filling on the circuit board. The polyaniline solution is prepared by dispersing 0.3-3 g polyaniline in 100 ml ethanol. USE - The method is useful for blind hole filling using reduced graphene as seed layer. ADVANTAGE - The method is simple and suitable for mass production and uses conductive polymer polyaniline and graphene to construct copper plating barrier layer and crystal seed layer, improves the blind hole conductivity and filling efficiency, prevents anode glass fiber leakage, and utilizes less chemical raw material. DESCRIPTION OF DRAWING(S) - The diagram shows a process flow schematic diagram of the blind hole filling method using reduced graphene as a seed layer (Drawing includes non-English language text).