• 专利标题:   Method for producing graphene nano-wall flexible conductive film for manufacturing wearable device, involves growing flexible wall graphene nano electroconductive thin film directly on target substrate for obtaining graphene wall.
  • 专利号:   CN104505147-A, CN104505147-B
  • 发明人:   DU C, GU F, SHI H, YANG J, WEI D
  • 专利权人:   CHINESE ACAD SCI CHONGQING GREEN INTEL, CHONGQING GRAPHENE INST
  • 国际专利分类:   H01B013/00, H01B005/14
  • 专利详细信息:   CN104505147-A 08 Apr 2015 H01B-005/14 201544 Pages: 9 Chinese
  • 申请详细信息:   CN104505147-A CN10667866 13 Nov 2014
  • 优先权号:   CN10667866

▎ 摘  要

NOVELTY - The method involves forming flexible wall graphene nano electroconductive thin film which is a two-dimensional/three-dimensional structure continuous uniform film. The substrate of polyethylene film is provided with a certain flexibility polymeric material. The flexible wall graphene nano electroconductive thin film is grown directly on the target substrate for obtaining graphene wall transferred to target substrate. USE - Method for producing Graphene nano-wall flexible conductive film for manufacturing wearable device and solar energy cell. ADVANTAGE - The flexible conductive film is formed simply, with low cost, high efficiency, wide range of application, and high quality. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the graphene nano-wall flexible conductive film production process. (Drawing includes non-English language text)