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  • 专利标题:   Preparing clean double-layer and few-layer graphene film, comprises placing substrate in atmosphere containing first oxidizing gas, annealing, placing substrate in reaction mixed gas containing reducing gas, a carbon source and a second oxidation gas, and heating to growth temperature.
  • 专利号:   CN113667960-A
  • 发明人:   LI G, ZHANG Y, LIU X, ZHANG M, GAO X, ZHANG J, PENG H, LIU Z
  • 专利权人:   UNIV PEKING, BEIJING GRAPHENE INST
  • 国际专利分类:   C23C016/02, C23C016/26
  • 专利详细信息:   CN113667960-A 19 Nov 2021 C23C-016/02 202237 Chinese
  • 申请详细信息:   CN113667960-A CN10400896 13 May 2020
  • 优先权号:   CN10400896

▎ 摘　　要

NOVELTY - Preparing clean double-layer and few-layer graphene film comprises placing a substrate in an atmosphere containing a first oxidizing gas to anneal, placing the substrate after annealing in a reaction mixed gas containing reducing gas, a carbon source and a second oxidation gas, heating to a growth temperature for graphene growth, obtaining clean double layer and few layer graphene film, where the flow ratio of the reducing gas and the carbon source is 1-2000:0.1-20: 0.1-500. USE - Test details are described but no results given. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a clean double-layer and few-layer graphene film.