▎ 摘　　要

NOVELTY - Electronic device (300) comprises substrate (201) has source, drain, and channel between source and drain; gate electrode above the substrate and facing channel. The gate electrode (207) apart from channel in first direction; and ferroelectric thin film structure between channel and gate electrode. The ferroelectric thin film structure comprising first ferroelectric layer, crystallization barrier layer comprises a dielectric material, and second ferroelectric layer, where first ferroelectric layer, crystallization barrier layer, and second ferroelectric layer are sequentially on channel in first direction, average of sizes of crystal grains of first ferroelectric layer (206) is average of sizes of crystal grains of second ferroelectric layer, and size of each crystal grain refers to maximum width of crystal grain in cross-section perpendicular to the first direction. USE - Electronic device used in ferroelectric materials to logic devices or memory devices. ADVANTAGE - The electronic device has ferroelectricity even in the form of very thin films having a several nanometer (nm) thickness, apply to existing silicon-based semiconductor device processes to obtain high mass productivity, reduces dispersion in performance, prevent or reduce the likelihood of impact from electrical leakage, may not increase, increases by smaller amount, even when the electronic devices have small sizes, improve memory performance uniformity and has multi-bit memory performance. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for an electronic apparatus, where comprises memory device and controller electrically connected to the memory device and configured to control the memory device, where memory device and controller comprises the electronic device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic cross-sectional view illustrating a structure of an electronic device. 201Substrate 205Interfacial insulating layer 206Ferroelectric layer 207gate electrode 300Electronic device