▎ 摘　　要

NOVELTY - The structure has substrate (1), nucleation layer (2), non-doped gallium nitride (GaN) layer (3), N-type doped GaN layer (4), indium GAN/GAN (InGaN/GaN) multi-quantum trap structure (5), P-type doped graphene (6), P-type electrode (7) that are sequentially laminated in turn from bottom to top. The substrate is provided with saphire, silicon and silicon carbide. The nucleating layer is provided with low temperature GaN layer and aluminum nitride layer, and is provided with multi-lattice structure layer. The wafer is adjusted based on different growth temperatures and doping concentration. USE - Graphene-based LED chip structure for use in semiconductor industry. ADVANTAGE - The light emitting efficiency of the LED chip structure can be effectively increased and the outside quantum efficiency can be improved. The conductivity and productivity of graphene thin layer can be improved. The cost can be reduced effectively. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a preparation method of graphene-based LED chip structure. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic sectional view of graphene-based LED chip structure. Substrate (1) Nucleation layer (2) GaN layer (3) N-type doped GaN layer (4) InGaN/GaN multi-quantum trap structure (5) P-type doped graphene (6) P-type electrode (7)