▎ 摘　　要

NOVELTY - The fabrication method involves forming first metal contacts (110) on top of a substrate (105). Insulator pads (115) are formed at predefined locations on top of the first metal contacts and are spaced from one another. Second metal contacts (120) are formed on top of the insulator pads. A surface-sensitive conductive layer which includes topological insulators, graphene material, molybdenum sulfide or molybdenum selenide material, and a magnetic film is deposited on top of the metal contacts. The surface-sensitive conductive layer is etched to form conductive channels (310). USE - Fabrication method of semiconductor device. ADVANTAGE - The semiconductor device is protected by depositing a dielectric cap or removing a sacrificial layer on top of the active region to form a vacuum cap. The second layer of metal-rib contacts is formed on top of the first metal-rib array with the thin insulating pads underneath to prevent interlayer shorting. The surface-sensitive conductive layer is conformally deposited on top of the metal-rib contacts, the thin insulating pads, and the non-conducting substrate, such that the surface-sensitive conductive layer conforms to the shape of the elements below. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic top-down view of an individual four-terminal device. Substrate (105) First metal contacts (110) Insulator pads (115) Second metal contacts (120) Conductive channels (310)