▎ 摘　　要

NOVELTY - The method involves laminating an oxide layer on a metal layer. A metal layer is located at a downward and an outer side of a removed oxide layer that removes a partial domain of the oxide layer. An exposure field graphene is selectively deposited on a chemical vapor deposition (CVD). An upper side of the oxide layer is coated with a photoresist. The oxide layer is removed through a dry etch. The oxide layer is made of silicon dioxide (SiO2) or titanium dioxide (TiO2). The metal layer is made of cobalt (Co), platinum (Pt), iridium (Ir), ruthenium (Rb), nickel (Ni) and copper (Cu). USE - Method for forming a graphene pattern. ADVANTAGE - The method enables depositing graphene micro-pattern on the large size of a substrate with the chemical vapor deposition. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of a method for forming graphene pattern.