▎ 摘　　要

NOVELTY - The structure has a bottom layer formed with an h-BN medium layer (3), a graphite thin layer (1) and a top grate h-BN medium layer (2). A graphite alkene double-edge is connected to a source electrode (7) and a leakage electrode (8). The h-BN medium layer is formed with a catalytic metal thin film layer (4). USE - Graphene FET structure for a graphite alkenyl integrated circuit. ADVANTAGE - The structure has high finished product rate, and reduces manufacturing difficulty and improves product performance in a graphite alkenyl integrated circuit foundation. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene FET structure manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a graphene FET structure. Graphite thin layer (1) Top grate h-BN medium layer (2) H-BN medium layer (3) Catalytic metal thin film layer (4) Source electrode (7) Leakage electrode (8)