▎ 摘　　要

NOVELTY - The method involves providing a semiconductor substrate in a gate electrode structure, forming an insulating layer on the semiconductor substrate, and forming a graphene layer on the insulating layer. A gate structure is formed on the graphene layer, and a doped region is formed in the semiconductor substrate. The semiconductor substrate is made of silicon, and the insulating layer is made of silicon oxide. USE - Method for manufacturing a semiconductor device. ADVANTAGE - The method enables manufacturing the semiconductor device with better external resistance. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a semiconductor device.