▎ 摘　　要

NOVELTY - Manufacturing transistor structure involves forming a graphene layer on an upper surface of a substrate, and forming a source/drain electrode layer on the upper surface of the graphene layer. A gate structure is formed on the upper surface of the graphene layer. A supporting layer is formed on the upper surface of the graphene layer. A composite structure is transferred to a target substrate. The supporting layer is removed, and the source and drain electrode layers and the gate structure are left on a surface of the target substrate. USE - Method for manufacturing transistor structure. ADVANTAGE - The damage of the transistor structure manufacturing process to the target substrate material is reduced, which is good for improving the performance of the device and reducing the manufacturing cost. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a transistor structure, which comprises a target substrate, source and drain electrode layers positioned on the target substrate, and comprise source electrode layers and drain electrode layers which are positioned in different areas in the horizontal direction, and grid structure positioned on the target substrate.