▎ 摘　　要

NOVELTY - Electrostatic self-doping diode comprises an insulating substrate (1), a draining electrode (2), a dielectric layer (3), a two-dimensional semiconductor layer (5) and a source electrode (4). The draining electrode is located above the insulating substrate. The dielectric layer partially covers the draining electrode. The two-dimensional semiconductor layer is located above the dielectric layer and is in contact with the draining electrode. The source electrode is located above the two-dimensional semiconductor layer. The material of the two-dimensional semiconductor layer is a semiconductor material with a band gap. USE - Used as electrostatic self-doped diode. ADVANTAGE - The diode: has excellent service stability, excellent universality, excellent performance, and simple processing technique. The method: avoids problem of unstable material polarity caused by chemical doping, physical doping, and defect regulation; and provides a simple and feasible, and non-destructive reversible diode constructing new path. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparing the electrostatic self-doped diode. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic structural view of the electrostatic self-doped diode. 1Insulating substrate 2Draining electrode 3Dielectric layer 4Source electrode 5Two-dimensional semiconductor layer