▎ 摘　　要

NOVELTY - Producing graphene, comprises: spacing a source of silicon from a silicon carbide substrate in a pressure vessel, reducing the pressure in the vessel to vacuum and heating the silicon source to a first temperature to evaporate silicon from its opposing surface, while simultaneously, heating the silicon carbide substrate to a second temperature to anneal the substrate; or closely spacing two silicon carbide substrates in a pressure vessel, reducing the pressure in the vessel to vacuum, heating the silicon carbide wafers facing with each other to a target temperature, and maintaining the wafers. USE - The graphene is useful in post-complementary metal oxideusemiconductor digital electronics, single-molecule gas sensors, and spintronic devices. ADVANTAGE - The method provides graphene of large length scales with high quality and yield in an economical manner. DETAILED DESCRIPTION - Producing graphene, comprises: spacing a source of silicon from a silicon carbide substrate in a pressure vessel, reducing the pressure in the vessel to vacuum and heating the silicon source to a first temperature to evaporate silicon from its opposing surface, while simultaneously, heating the silicon carbide substrate to a second temperature to anneal the substrate; or closely spacing two silicon carbide substrates in a pressure vessel, reducing the pressure in the vessel to vacuum, heating the silicon carbide wafers facing with each other to a target temperature, and maintaining the silicon carbide wafers at that temperature for a certain period of time to form graphene. An INDEPENDENT CLAIM is included for the graphene produced by the above method. DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of a furnace for producing a graphene. Vacuum furnace (110) Convectron gauge (122) Ion gauge (124) Chamber (126) Valve. (128)