• 专利标题:   Three-dimension graphene micro-electrode array chip, has single layer graphene thin film cover formed with micro-electrode array that is connected with heave, and micro-electrode chip provided with periphery gold electrode lead pin.
  • 专利号:   CN105460882-A, CN105460882-B
  • 发明人:   JIN Q, WU L, TANG L, ZHAO J
  • 专利权人:   SHANGHAI INST MICROSYSTEM INFORMATION, SHANGHAI INST MICROSYSTEM INFORMATION
  • 国际专利分类:   B81B001/00, B81C001/00, G01N027/00, G01N033/483, G01N033/487
  • 专利详细信息:   CN105460882-A 06 Apr 2016 B81B-001/00 201628 Pages: 10 English
  • 申请详细信息:   CN105460882-A CN10885266 04 Dec 2015
  • 优先权号:   CN10885266

▎ 摘  要

NOVELTY - The chip has a micro-electrode array performs negative photo resist manufacturing process. A single layer graphene thin film cover is formed with a micro-electrode array that is connected with a third dimension heave. A micro-electrode chip is provided with a periphery gold electrode lead pin. The micro-electrode array is made of silicon chip, quartz or boron silicon glass materials. The silicon chip is formed with a substrate. USE - Three-dimension graphene micro-electrode array chip. ADVANTAGE - The chip is convenient to observe. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a three-dimension graphene micro-electrode array chip manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a three-dimension graphene micro-electrode array chip. '(Drawing includes non-English language text)'