• 专利标题:   Preparing differentially suspended monolayer graphene nanopore sensor for single molecule detection, involves providing silicon base layer, forming silicon dioxide layer on surface of one side of silicon base layer, forming graphene strip unit, using ion beam to punch nano-hole.
  • 专利号:   CN114715840-A
  • 发明人:   ZHAO S, ZHOU Y, ZHU H, XIE S, WANG H
  • 专利权人:   UNIV TSINGHUA
  • 国际专利分类:   B81C001/00, B82Y015/00, B82Y040/00, C12Q001/6869
  • 专利详细信息:   CN114715840-A 08 Jul 2022 B81C-001/00 202287 Chinese
  • 申请详细信息:   CN114715840-A CN10372933 11 Apr 2022
  • 优先权号:   CN10372933

▎ 摘  要

NOVELTY - Preparing differentially suspended monolayer graphene nanopore sensor involves providing a silicon base layer, forming silicon dioxide layer on surface of one side of the silicon base layer. The side of the silicon base layer away from the silicon dioxide layer is etched, to form at least one trench on the silicon base layer, so that the silicon dioxide layer located in the groove area is suspended. Graphene strip unit is formed on a side of the silicon dioxide layer away from the silicon substrate, and the graphene strip unit includes two single-layer graphene strips that are spaced apart and span the trench at the same time. The exposed silicon dioxide layer in the trench region is etched away by using a hydrofluoric acid solution. The single-layer graphene strips corresponding to the groove regions are left in the air. Nanoholes are punched in one of the two monolayer graphene strips suspended in the trench using an ion beam to obtain the sensor. USE - Method for preparing differentially suspended monolayer graphene nanopore sensor for single molecule detection. ADVANTAGE - The method enables obtaining extremely high spatial resolution, improving signal strength and signal-to-noise ratio, and improving data stability and repeatability. DETAILED DESCRIPTION - Preparing differentially suspended monolayer graphene nanopore sensor involves providing a silicon base layer, forming silicon dioxide layer on surface of one side of the silicon base layer. The side of the silicon base layer away from the silicon dioxide layer is etched, to form at least one trench on the silicon base layer, so that the silicon dioxide layer located in the groove area is suspended. Graphene strip unit is formed on a side of the silicon dioxide layer away from the silicon substrate, and the graphene strip unit includes two single-layer graphene strips that are spaced apart and span the trench at the same time. Metal electrode layers are deposited on portions of the silicon dioxide layer and the monolayer graphene strips on both sides of the trench. The exposed silicon dioxide layer in the trench region is etched away by using a hydrofluoric acid solution. The single-layer graphene strips corresponding to the groove regions are left in the air. Nanoholes are punched in one of the two monolayer graphene strips suspended in the trench using an ion beam to obtain the sensor. INDEPENDENT CLAIMS are included for: (1) a differential suspension monolayer graphene nanopore sensor, which is prepared; (2) a method for single-molecule detection, which involves: (a) using the differential suspension monolayer graphene nanopore sensor.